Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesLittelfuse Inc.onsemiPanjit International Inc.
Series
-OptiMOS™Polar
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V50 V60 V100 V200 V
Current - Continuous Drain (Id) @ 25°C
170mA (Ta)500mA (Ta)12A (Ta), 36A (Tc)21A (Ta), 98A (Tc)26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
3.2mOhm @ 50A, 10V15mOhm @ 10A, 10V170mOhm @ 13A, 10V1.6Ohm @ 500mA, 10V6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA2V @ 250µA2V @ 25µA2.8V @ 1mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1 nC @ 4.5 V9.7 nC @ 10 V25 nC @ 10 V56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
20 pF @ 25 V50 pF @ 25 V620 pF @ 25 V1800 pF @ 20 V2740 pF @ 25 V
Power Dissipation (Max)
225mW (Ta)500mW (Ta)2.5W (Ta), 52W (Tc)3.8W (Ta), 37W (Tc)300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
LFPAK4 (5x6)PG-TDSON-8-6SOT-23SOT-23-3 (TO-236)TO-263 (D2PAK)
Package / Case
8-PowerTDFNSOT-1023, 4-LFPAKTO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
BVSS123LT1G
MOSFET N-CH 100V 170MA SOT23-3
onsemi
10,347
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.68125
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
100 V
170mA (Ta)
10V
6Ohm @ 100mA, 10V
2.8V @ 1mA
-
±20V
20 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
8-Power TDFN
BSC032N04LSATMA1
MOSFET N-CH 40V 21A/98A TDSON
Infineon Technologies
12,548
In Stock
1 : ¥9.11000
Cut Tape (CT)
5,000 : ¥3.59590
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
21A (Ta), 98A (Tc)
4.5V, 10V
3.2mOhm @ 50A, 10V
2V @ 250µA
25 nC @ 10 V
±20V
1800 pF @ 20 V
-
2.5W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
TO-263AB
IXTA26P20P-TRL
MOSFET P-CH 200V 26A TO263
Littelfuse Inc.
1,969
In Stock
1 : ¥54.35000
Cut Tape (CT)
800 : ¥34.25880
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
200 V
26A (Tc)
10V
170mOhm @ 13A, 10V
4V @ 250µA
56 nC @ 10 V
±20V
2740 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SOT 1023
NVMYS014N06CLTWG
MOSFET N-CH 60V 12A/36A 4LFPAK
onsemi
10,156
In Stock
1 : ¥7.39000
Cut Tape (CT)
3,000 : ¥3.06040
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
12A (Ta), 36A (Tc)
4.5V, 10V
15mOhm @ 10A, 10V
2V @ 25µA
9.7 nC @ 10 V
±20V
620 pF @ 25 V
-
3.8W (Ta), 37W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK4 (5x6)
SOT-1023, 4-LFPAK
285,635
In Stock
1 : ¥1.64000
Cut Tape (CT)
3,000 : ¥0.32206
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
500mA (Ta)
2.5V, 10V
1.6Ohm @ 500mA, 10V
1.5V @ 250µA
1 nC @ 4.5 V
±20V
50 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.