Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

NTA7002NT1G MOSFET N-CH 30V 154MA SC75 onsemi	192,466 In Stock	1 : ¥2.79000 Cut Tape (CT) 3,000 : ¥0.46914 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	154mA (Tj)	2.5V, 4.5V	7Ohm @ 154mA, 4.5V	1.5V @ 100µA	-	±10V	20 pF @ 5 V	-	300mW (Tj)	-55°C ~ 150°C (TJ)	Surface Mount	SC-75, SOT-416	SC-75, SOT-416
DMP3028LFDE-13 MOSFET P-CH 30V 6.8A 6UDFN Diodes Incorporated	440,042 In Stock 60,000 Factory	1 : ¥2.55000 Cut Tape (CT) 10,000 : ¥1.03854 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	6.8A (Ta)	4.5V, 10V	32mOhm @ 7A, 10V	2.4V @ 250µA	22 nC @ 10 V	±20V	1241 pF @ 15 V	-	660mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type E)	6-PowerUDFN
SI4056ADY-T1-GE3 MOSFET N-CH 100V 5.9A/8.3A 8SOIC Vishay Siliconix	21,026 In Stock	1 : ¥6.90000 Cut Tape (CT) 2,500 : ¥2.63495 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	5.9A (Ta), 8.3A (Tc)	-	29.2mOhm @ 5.9A, 10V	2.5V @ 250µA	29 nC @ 10 V	±20V	1330 pF @ 50 V	-	2.5W (Ta), 5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.