Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

SI2304DDS-T1-GE3 MOSFET N-CH 30V 3.3A/3.6A SOT23 Vishay Siliconix	47,925 In Stock	1 : ¥3.37000 Cut Tape (CT) 3,000 : ¥0.90839 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	3.3A (Ta), 3.6A (Tc)	4.5V, 10V	60mOhm @ 3.2A, 10V	2.2V @ 250µA	6.7 nC @ 10 V	±20V	235 pF @ 15 V	-	1.1W (Ta), 1.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SIR422DP-T1-GE3 MOSFET N-CH 40V 40A PPAK SO-8 Vishay Siliconix	51,103 In Stock	1 : ¥9.28000 Cut Tape (CT) 3,000 : ¥3.84826 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	40A (Tc)	4.5V, 10V	6.6mOhm @ 20A, 10V	2.5V @ 250µA	48 nC @ 10 V	±20V	1785 pF @ 20 V	-	5W (Ta), 34.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
NVH4L020N120SC1 SICFET N-CH 1200V 102A TO247 onsemi	1,403 In Stock	1 : ¥420.18000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	102A (Tc)	20V	28mOhm @ 60A, 20V	4.3V @ 20mA	220 nC @ 20 V	+25V, -15V	2943 pF @ 800 V	-	510W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L	TO-247-4
SI7898DP-T1-E3 MOSFET N-CH 150V 3A PPAK SO-8 Vishay Siliconix	14,842 In Stock	1 : ¥14.45000 Cut Tape (CT) 3,000 : ¥6.50665 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	3A (Ta)	6V, 10V	85mOhm @ 3.5A, 10V	4V @ 250µA	21 nC @ 10 V	±20V	-	-	1.9W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.