Single FETs, MOSFETs

Results: 3
Manufacturer
STMicroelectronicsToshiba Semiconductor and StorageVishay Siliconix
Series
MDmesh™ IITrenchFET®U-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V600 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)650mA (Ta), 2.2A (Tc)75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
8.1mOhm @ 16A, 10V1.8Ohm @ 1A, 10V3.9Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA2.5V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.35 nC @ 4.5 V9.5 nC @ 10 V108 nC @ 10 V
Vgs (Max)
±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
17 pF @ 10 V188 pF @ 50 V4877 pF @ 15 V
Power Dissipation (Max)
320mW (Ta)2W (Ta), 22W (Tc)83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
PowerFlat™ (3.3x3.3)PowerPAK® SO-8SOT-23-3
Package / Case
8-PowerVDFNPowerPAK® SO-8TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
462,683
In Stock
1 : ¥1.15000
Cut Tape (CT)
3,000 : ¥0.21578
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
200mA (Ta)
4.5V, 10V
3.9Ohm @ 100mA, 10V
2.1V @ 250µA
0.35 nC @ 4.5 V
±20V
17 pF @ 10 V
-
320mW (Ta)
150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
PowerPak SO-8L
SQJ433EP-T1_GE3
MOSFET P-CH 30V 75A PPAK SO-8
Vishay Siliconix
5,188
In Stock
1 : ¥11.17000
Cut Tape (CT)
3,000 : ¥4.60209
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
75A (Tc)
4.5V, 10V
8.1mOhm @ 16A, 10V
2.5V @ 250µA
108 nC @ 10 V
±20V
4877 pF @ 15 V
-
83W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
8PowerVDFN
STL3NM60N
MOSFET N-CH 600V 0.65A POWERFLAT
STMicroelectronics
8,689
In Stock
1 : ¥13.30000
Cut Tape (CT)
3,000 : ¥7.94709
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
650mA (Ta), 2.2A (Tc)
10V
1.8Ohm @ 1A, 10V
4V @ 250µA
9.5 nC @ 10 V
±25V
188 pF @ 50 V
-
2W (Ta), 22W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerFlat™ (3.3x3.3)
8-PowerVDFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.