Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesPanjit International Inc.Rohm Semiconductor
Series
-OptiMOS™ 5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
50 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)7.4A (Ta), 48A (Tc)40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
14.6mOhm @ 20A, 10V17mOhm @ 20A, 10V2.2Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
800mV @ 1mA2.3V @ 23µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.2 nC @ 4.5 V13.5 nC @ 4.5 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
26 pF @ 10 V1300 pF @ 50 V1574 pF @ 25 V
Power Dissipation (Max)
350mW (Tc)2.4W (Ta), 100W (Tc)52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
DFN5060-8PG-TSDSON-8-FLSST3
Package / Case
8-PowerTDFN8-PowerVDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TSDSON-8
BSZ146N10LS5ATMA1
MOSFET N-CH 100V 40A TSDSON
Infineon Technologies
22,702
In Stock
1 : ¥12.15000
Cut Tape (CT)
5,000 : ¥4.77208
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
40A (Tc)
4.5V, 10V
14.6mOhm @ 20A, 10V
2.3V @ 23µA
3.2 nC @ 4.5 V
±20V
1300 pF @ 50 V
-
52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
7-PDIP Less Pin 6
RYC002N05T316
MOSFET N-CHANNEL 50V 200MA SST3
Rohm Semiconductor
28,270
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.66792
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
4.5V
2.2Ohm @ 200mA, 4.5V
800mV @ 1mA
-
±8V
26 pF @ 10 V
-
350mW (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
DFN5060-8
PJQ5466A1-AU_R2_000A1
60V N-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
4,387
In Stock
1 : ¥7.55000
Cut Tape (CT)
3,000 : ¥2.86443
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
7.4A (Ta), 48A (Tc)
4.5V, 10V
17mOhm @ 20A, 10V
2.5V @ 250µA
13.5 nC @ 4.5 V
±20V
1574 pF @ 25 V
-
2.4W (Ta), 100W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
DFN5060-8
8-PowerVDFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.