Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

NTHL020N090SC1 SICFET N-CH 900V 118A TO247-3 onsemi	172 In Stock 900 Factory	1 : ¥225.19000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	900 V	118A (Tc)	15V	28mOhm @ 60A, 15V	4.3V @ 20mA	196 nC @ 15 V	+19V, -10V	4415 pF @ 450 V	-	503W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
SI2310B-TP MOSFET N-CH 60V 3A SOT23 Micro Commercial Co	103,130 In Stock	1 : ¥2.96000 Cut Tape (CT) 3,000 : ¥0.53750 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	3A (Tj)	4.5V, 10V	105mOhm @ 3A, 10V	1.3V @ 250µA	6 nC @ 4.5 V	±16V	247 pF @ 30 V	-	1.2W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
DMTH45M5LPSWQ-13 MOSFET BVDSS: 31V~40V POWERDI506 Diodes Incorporated	1,080 In Stock 10,000 Factory	1 : ¥7.39000 Cut Tape (CT) 2,500 : ¥2.80894 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	86A (Tc)	4.5V, 10V	5.5mOhm @ 25A, 10V	2.3V @ 250µA	13.9 nC @ 10 V	±20V	978 pF @ 20 V	-	3.5W (Ta), 72W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.