Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesToshiba Semiconductor and StorageVishay Siliconix
Series
SIPMOS®TrenchFET®U-MOSIII
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V80 V250 V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
0V, 10V2.5V, 4V6V, 10V
Rds On (Max) @ Id, Vgs
270mOhm @ 1.2A, 10V3.6Ohm @ 10mA, 4V14Ohm @ 100µA, 10V
Vgs(th) (Max) @ Id
1V @ 56µA1.5V @ 100µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.5 nC @ 5 V17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
13.5 pF @ 3 V76 pF @ 25 V500 pF @ 40 V
FET Feature
-Depletion Mode
Power Dissipation (Max)
150mW (Ta)360mW (Ta)760mW (Ta), 2.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-50°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
PG-SOT23SOT-23-3 (TO-236)VESM
Package / Case
SOT-723TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
66,579
In Stock
1 : ¥1.89000
Cut Tape (CT)
8,000 : ¥0.32769
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
100mA (Ta)
2.5V, 4V
3.6Ohm @ 10mA, 4V
1.5V @ 100µA
-
±20V
13.5 pF @ 3 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
VESM
SOT-723
SOT-23-3
BSS139H6327XTSA1
MOSFET N-CH 250V 100MA SOT23-3
Infineon Technologies
111,888
In Stock
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥1.25364
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
100mA (Ta)
0V, 10V
14Ohm @ 100µA, 10V
1V @ 56µA
3.5 nC @ 5 V
±20V
76 pF @ 25 V
Depletion Mode
360mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SI2337DS-T1-E3
MOSFET P-CH 80V 2.2A SOT23-3
Vishay Siliconix
24,265
In Stock
1 : ¥7.96000
Cut Tape (CT)
3,000 : ¥3.28236
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
80 V
2.2A (Tc)
6V, 10V
270mOhm @ 1.2A, 10V
4V @ 250µA
17 nC @ 10 V
±20V
500 pF @ 40 V
-
760mW (Ta), 2.5W (Tc)
-50°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.