Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
18A (Tc)56A (Tc)
Rds On (Max) @ Id, Vgs
41mOhm @ 25A, 18V189mOhm @ 6A, 18V
Vgs(th) (Max) @ Id
5.7V @ 11.5mA5.7V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
13.4 nC @ 18 V63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
491 pF @ 800 V2290 pF @ 800 V
Power Dissipation (Max)
107W (Tc)300W (Tc)
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
CoolSiC_MOSFET
IMBG120R030M1HXTMA1
SICFET N-CH 1.2KV 56A TO263
Infineon Technologies
683
In Stock
1 : ¥134.31000
Cut Tape (CT)
1,000 : ¥85.04528
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
56A (Tc)
41mOhm @ 25A, 18V
5.7V @ 11.5mA
63 nC @ 18 V
+18V, -15V
2290 pF @ 800 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
CoolSiC_MOSFET
IMBG120R140M1HXTMA1
SICFET N-CH 1.2KV 18A TO263
Infineon Technologies
20
In Stock
1 : ¥59.77000
Cut Tape (CT)
1,000 : ¥33.88441
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
18A (Tc)
189mOhm @ 6A, 18V
5.7V @ 2.5mA
13.4 nC @ 18 V
+18V, -15V
491 pF @ 800 V
-
107W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.