Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
OptiMOS™SIPMOS®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V60 V75 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 50A (Tc)28A (Tc)30A (Tc)110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
8mOhm @ 30A, 10V10mOhm @ 50A, 10V10.5mOhm @ 15A, 10V11mOhm @ 15A, 10V75mOhm @ 21.5A, 10V
Vgs(th) (Max) @ Id
2.2V @ 23µA2.5V @ 250µA3V @ 250µA4V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V45 nC @ 10 V48 nC @ 10 V100 nC @ 10 V240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1160 pF @ 20 V1535 pF @ 25 V2900 pF @ 35 V3500 pF @ 30 V9200 pF @ 25 V
Power Dissipation (Max)
2.5W (Ta), 50W (Tc)3.75W (Ta), 272W (Tc)4.8W (Ta), 41.7W (Tc)5.4W (Ta), 96W (Tc)125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TDSON-8-5PG-TO252-3PowerPAK® SO-8TO-263 (D2PAK)
Package / Case
8-PowerTDFNPowerPAK® SO-8TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPAK SO-8
SIR426DP-T1-GE3
MOSFET N-CH 40V 30A PPAK SO-8
Vishay Siliconix
40,690
In Stock
1 : ¥8.21000
Cut Tape (CT)
3,000 : ¥3.39552
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
30A (Tc)
4.5V, 10V
10.5mOhm @ 15A, 10V
2.5V @ 250µA
31 nC @ 10 V
±20V
1160 pF @ 20 V
-
4.8W (Ta), 41.7W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
8-Power TDFN
BSC100N06LS3GATMA1
MOSFET N-CH 60V 12A/50A TDSON
Infineon Technologies
6,145
In Stock
1 : ¥9.19000
Cut Tape (CT)
5,000 : ¥3.62190
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
12A (Ta), 50A (Tc)
4.5V, 10V
10mOhm @ 50A, 10V
2.2V @ 23µA
45 nC @ 10 V
±20V
3500 pF @ 30 V
-
2.5W (Ta), 50W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-5
8-PowerTDFN
PowerPAK SO-8
SI7148DP-T1-E3
MOSFET N-CH 75V 28A PPAK SO-8
Vishay Siliconix
15,662
In Stock
1 : ¥19.29000
Cut Tape (CT)
3,000 : ¥8.70899
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
75 V
28A (Tc)
4.5V, 10V
11mOhm @ 15A, 10V
2.5V @ 250µA
100 nC @ 10 V
±20V
2900 pF @ 35 V
-
5.4W (Ta), 96W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
TO-263 (D2Pak)
SUM110P06-08L-E3
MOSFET P-CH 60V 110A TO263
Vishay Siliconix
2,976
In Stock
1 : ¥35.14000
Cut Tape (CT)
800 : ¥21.22728
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
110A (Tc)
4.5V, 10V
8mOhm @ 30A, 10V
3V @ 250µA
240 nC @ 10 V
±20V
9200 pF @ 25 V
-
3.75W (Ta), 272W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO252-3
SPD30P06PGBTMA1
MOSFET P-CH 60V 30A TO252-3
Infineon Technologies
15,099
In Stock
1 : ¥12.89000
Cut Tape (CT)
2,500 : ¥5.33778
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
30A (Tc)
10V
75mOhm @ 21.5A, 10V
4V @ 1.7mA
48 nC @ 10 V
±20V
1535 pF @ 25 V
-
125W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.