Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesToshiba Semiconductor and Storage
Series
HEXFET®OptiMOS™U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
6A (Ta)13A (Ta)50A (Tc)161A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
3.3mOhm @ 15A, 10V6mOhm @ 30A, 10V10mOhm @ 13A, 10V42mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
1.2V @ 1mA2.2V @ 250µA2.25V @ 25µA2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 4.5 V14 nC @ 4.5 V23 nC @ 10 V50 nC @ 4.5 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
560 pF @ 15 V1210 pF @ 15 V2400 pF @ 15 V4380 pF @ 15 V
Power Dissipation (Max)
1W (Ta)2.5W (Ta)56W (Tc)140W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
8-SOPG-TO252-3SOT-23FTO-252AA (DPAK)
Package / Case
8-SOIC (0.154", 3.90mm Width)SOT-23-3 Flat LeadsTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
94,985
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.63495
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
6A (Ta)
1.8V, 10V
42mOhm @ 5A, 10V
1.2V @ 1mA
8.2 nC @ 4.5 V
±12V
560 pF @ 15 V
-
1W (Ta)
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
IRF7413ZTRPBF
MOSFET N-CH 30V 13A 8SO
Infineon Technologies
7,046
In Stock
1 : ¥7.47000
Cut Tape (CT)
4,000 : ¥2.84055
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
13A (Ta)
4.5V, 10V
10mOhm @ 13A, 10V
2.25V @ 25µA
14 nC @ 4.5 V
±20V
1210 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
TO252-3
IPD060N03LGATMA1
MOSFET N-CH 30V 50A TO252-3
Infineon Technologies
1,265
In Stock
1 : ¥7.39000
Cut Tape (CT)
2,500 : ¥3.05598
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
50A (Tc)
4.5V, 10V
6mOhm @ 30A, 10V
2.2V @ 250µA
23 nC @ 10 V
±20V
2400 pF @ 15 V
-
56W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IRLR7843TRPBF
MOSFET N-CH 30V 161A DPAK
Infineon Technologies
29,745
In Stock
1 : ¥7.47000
Cut Tape (CT)
2,000 : ¥4.00228
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
161A (Tc)
4.5V, 10V
3.3mOhm @ 15A, 10V
2.3V @ 250µA
50 nC @ 4.5 V
±20V
4380 pF @ 15 V
-
140W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.