Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

PJC138K_R1_00001 SOT-323, MOSFET Panjit International Inc.	42,505 In Stock	1 : ¥1.72000 Cut Tape (CT) 3,000 : ¥0.29687 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	360mA (Ta)	2.5V, 10V	1.6Ohm @ 500mA, 10V	1.5V @ 250µA	1 nC @ 4.5 V	±20V	50 pF @ 25 V	-	236mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-323	SC-70, SOT-323
PMV48XPA2R MOSFET P-CH 20V 4A TO236AB Nexperia USA Inc.	13,847 In Stock	1 : ¥2.87000 Cut Tape (CT) 3,000 : ¥0.76682 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4A (Ta)	2.5V, 8V	49mOhm @ 4A, 8V	1.3V @ 250µA	10 nC @ 4.5 V	±12V	679 pF @ 10 V	-	610mW (Ta), 8.3W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
SSM3J351R,LF MOSFET P-CH 60V 3.5A SOT-23F Toshiba Semiconductor and Storage	114,944 In Stock	1 : ¥4.43000 Cut Tape (CT) 3,000 : ¥0.99527 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	3.5A (Ta)	4V, 10V	134mOhm @ 1A, 10V	2V @ 1mA	15.1 nC @ 10 V	+10V, -20V	660 pF @ 10 V	-	2W (Ta)	150°C	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.