Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedInfineon Technologiesonsemi
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)10.5A (Ta)11A (Ta)12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V10V
Rds On (Max) @ Id, Vgs
13.5mOhm @ 11A, 10V15mOhm @ 10.5A, 10V180mOhm @ 6A, 10V7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id
2.5V @ 250µA3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V750 pF @ 25 V4030 pF @ 25 V9250 pF @ 25 V
Power Dissipation (Max)
370mW (Ta)2.5W (Ta)55W (Tj)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-SODPAKSOT-23-3
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
2N7002-7-F
MOSFET N-CH 60V 115MA SOT23-3
Diodes Incorporated
377,621
In Stock
1 : ¥1.56000
Cut Tape (CT)
3,000 : ¥0.26991
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 50mA, 5V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
370mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DPAK_369C
NTD2955T4G
MOSFET P-CH 60V 12A DPAK
onsemi
19,261
In Stock
1 : ¥9.69000
Cut Tape (CT)
2,500 : ¥4.01693
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
12A (Ta)
10V
180mOhm @ 6A, 10V
4V @ 250µA
30 nC @ 10 V
±20V
750 pF @ 25 V
-
55W (Tj)
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
IRF7240TRPBF
MOSFET P-CH 40V 10.5A 8SO
Infineon Technologies
9,650
In Stock
1 : ¥11.82000
Cut Tape (CT)
4,000 : ¥4.90314
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
10.5A (Ta)
4.5V, 10V
15mOhm @ 10.5A, 10V
3V @ 250µA
110 nC @ 10 V
±20V
9250 pF @ 25 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7424TRPBF
MOSFET P-CH 30V 11A 8SO
Infineon Technologies
24,625
In Stock
1 : ¥6.57000
Cut Tape (CT)
4,000 : ¥3.48506
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
11A (Ta)
4.5V, 10V
13.5mOhm @ 11A, 10V
2.5V @ 250µA
110 nC @ 10 V
±20V
4030 pF @ 25 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.