Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
CoolMOS™ C7TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V600 V
Current - Continuous Drain (Id) @ 25°C
4.1A (Ta)22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
42mOhm @ 5.7A, 10V99mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V42 nC @ 10 V
Power Dissipation (Max)
1.3W (Ta)110W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-SOICPG-TO220-3-1
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-220-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-SOIC
SI9435BDY-T1-E3
MOSFET P-CH 30V 4.1A 8SO
Vishay Siliconix
10,567
In Stock
1 : ¥7.06000
Cut Tape (CT)
2,500 : ¥2.91336
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
4.1A (Ta)
4.5V, 10V
42mOhm @ 5.7A, 10V
3V @ 250µA
24 nC @ 10 V
±20V
-
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
TO-220-3
IPP60R099C7XKSA1
MOSFET N-CH 600V 22A TO220-3
Infineon Technologies
0
In Stock
Check Lead Time
500 : ¥19.48368
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
22A (Tc)
10V
99mOhm @ 9.7A, 10V
4V @ 490µA
42 nC @ 10 V
±20V
1819 pF @ 400 V
-
110W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.