Single FETs, MOSFETs

Results: 6
Manufacturer
Infineon Technologiesonsemi
Series
OptiMOS™PowerTrench®, SyncFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
21A (Ta), 72A (Tc)26A (Ta), 100A (Tc)30A (Ta), 40A (Tc)31A (Ta), 49A (Tc)100A (Tc)381A (Tc)
Rds On (Max) @ Id, Vgs
0.7mOhm @ 50A, 10V1.5mOhm @ 20A, 10V1.8mOhm @ 30A, 10V2.3mOhm @ 30A, 10V2.7mOhm @ 50A, 10V3.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.3V @ 250µA2.3V @ 49µA3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V26 nC @ 10 V30 nC @ 4.5 V52 nC @ 10 V94 nC @ 4.5 V133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
960 pF @ 15 V1600 pF @ 15 V3400 pF @ 15 V4400 pF @ 30 V8400 pF @ 20 V8705 pF @ 15 V
Power Dissipation (Max)
2.1W (Ta), 69W (Tc)2.5W (Ta), 30W (Tc)2.5W (Ta), 43W (Tc)2.5W (Ta), 96W (Tc)83W (Tc)188W
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-PQFN (5x6)PG-TDSON-8-6PG-TDSON-8-7PG-TSDSON-8-FL
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC027N06LS5ATMA1
MOSFET N-CH 60V 100A TDSON
Infineon Technologies
881
In Stock
1 : ¥20.20000
Cut Tape (CT)
5,000 : ¥8.78067
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Tc)
4.5V, 10V
2.7mOhm @ 50A, 10V
2.3V @ 49µA
30 nC @ 4.5 V
±20V
4400 pF @ 30 V
-
83W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
8-Power TDFN
BSC007N04LS6ATMA1
MOSFET N-CH 40V 100A TDSON-8-6
Infineon Technologies
8,104
In Stock
1 : ¥26.60000
Cut Tape (CT)
5,000 : ¥12.44196
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
381A (Tc)
4.5V, 10V
0.7mOhm @ 50A, 10V
2.3V @ 250µA
94 nC @ 4.5 V
±20V
8400 pF @ 20 V
-
188W
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
8-Power TDFN
BSC0504NSIATMA1
MOSFET N-CH 30V 21A/72A TDSON
Infineon Technologies
21,907
In Stock
1 : ¥8.87000
Cut Tape (CT)
5,000 : ¥3.49147
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
21A (Ta), 72A (Tc)
4.5V, 10V
3.7mOhm @ 30A, 10V
2V @ 250µA
15 nC @ 10 V
±20V
960 pF @ 15 V
-
2.5W (Ta), 30W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
8-Power TDFN
BSC0502NSIATMA1
MOSFET N-CH 30V 26A/100A TDSON
Infineon Technologies
24,257
In Stock
1 : ¥12.31000
Cut Tape (CT)
5,000 : ¥4.84753
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
26A (Ta), 100A (Tc)
4.5V, 10V
2.3mOhm @ 30A, 10V
2V @ 250µA
26 nC @ 10 V
±20V
1600 pF @ 15 V
-
2.5W (Ta), 43W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
TSDSON-8
BSZ0500NSIATMA1
MOSFET N-CH 30V 30A/40A TSDSON
Infineon Technologies
9,929
In Stock
1 : ¥18.31000
Cut Tape (CT)
5,000 : ¥7.93051
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
30A (Ta), 40A (Tc)
4.5V, 10V
1.5mOhm @ 20A, 10V
2V @ 250µA
52 nC @ 10 V
±20V
3400 pF @ 15 V
-
2.1W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
8-PQFN
FDMS7656AS
MOSFET N-CH 30V 31A/49A 8PQFN
onsemi
3,000
In Stock
24,000
Factory
1 : ¥14.53000
Cut Tape (CT)
3,000 : ¥6.08243
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
31A (Ta), 49A (Tc)
4.5V, 10V
1.8mOhm @ 30A, 10V
3V @ 1mA
133 nC @ 10 V
±20V
8705 pF @ 15 V
-
2.5W (Ta), 96W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.