Single FETs, MOSFETs

Results: 4
Manufacturer
Rohm SemiconductorTexas Instruments
Series
-NexFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V30 V60 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)60A (Ta)60A (Tc)100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
1mOhm @ 35A, 10V4.2mOhm @ 18A, 10V9.9mOhm @ 12A, 10V39mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA1.8V @ 250µA2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14.5 nC @ 10 V18 nC @ 4.5 V35 nC @ 10 V64 nC @ 4.5 V
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
1150 pF @ 30 V1860 pF @ 6 V2310 pF @ 15 V9000 pF @ 15 V
Power Dissipation (Max)
800mW (Ta)3W (Ta), 53W (Tc)3.2W (Ta), 195W (Tc)66W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
8-VSON-CLIP (5x6)8-VSONP (3x3.3)8-VSONP (5x6)TUMT3
Package / Case
3-SMD, Flat Leads8-PowerTDFN8-PowerVDFN
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
CSD18543Q3A
MOSFET N-CH 60V 60A 8VSON
Texas Instruments
35,727
In Stock
1 : ¥7.47000
Cut Tape (CT)
2,500 : ¥2.82897
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
60A (Tc)
4.5V, 10V
9.9mOhm @ 12A, 10V
2.7V @ 250µA
14.5 nC @ 10 V
±20V
1150 pF @ 30 V
-
66W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSONP (3x3.3)
8-PowerVDFN
8-Power TDFN
CSD17573Q5B
MOSFET N-CH 30V 100A 8VSON
Texas Instruments
3,389
In Stock
1 : ¥13.55000
Cut Tape (CT)
2,500 : ¥5.61091
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
100A (Ta)
4.5V, 10V
1mOhm @ 35A, 10V
1.8V @ 250µA
64 nC @ 4.5 V
±20V
9000 pF @ 15 V
-
3.2W (Ta), 195W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (5x6)
8-PowerTDFN
TUMT3
RZF030P01TL
MOSFET P-CH 12V 3A TUMT3
Rohm Semiconductor
48,297
In Stock
1 : ¥5.25000
Cut Tape (CT)
3,000 : ¥1.98508
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
3A (Ta)
1.5V, 4.5V
39mOhm @ 3A, 4.5V
1V @ 1mA
18 nC @ 4.5 V
±10V
1860 pF @ 6 V
-
800mW (Ta)
150°C (TJ)
Surface Mount
TUMT3
3-SMD, Flat Leads
8-Power TDFN
CSD17577Q5A
MOSFET N-CH 30V 60A 8VSON
Texas Instruments
14,152
In Stock
1 : ¥6.24000
Cut Tape (CT)
2,500 : ¥2.36331
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
60A (Ta)
4.5V, 10V
4.2mOhm @ 18A, 10V
1.8V @ 250µA
35 nC @ 10 V
±20V
2310 pF @ 15 V
-
3W (Ta), 53W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.