Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SI4421DY-T1-E3 MOSFET P-CH 20V 10A 8SO Vishay Siliconix	8,928 In Stock	1 : ¥16.58000 Cut Tape (CT) 2,500 : ¥7.47466 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	10A (Ta)	1.8V, 4.5V	8.75mOhm @ 14A, 4.5V	800mV @ 850µA	125 nC @ 4.5 V	±8V	-	-	1.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IPD060N03LGATMA1 MOSFET N-CH 30V 50A TO252-3 Infineon Technologies	1,265 In Stock	1 : ¥7.39000 Cut Tape (CT) 2,500 : ¥3.05588 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	50A (Tc)	4.5V, 10V	6mOhm @ 30A, 10V	2.2V @ 250µA	23 nC @ 10 V	±20V	2400 pF @ 15 V	-	56W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRLR7843TRPBF MOSFET N-CH 30V 161A DPAK Infineon Technologies	29,703 In Stock	1 : ¥7.47000 Cut Tape (CT) 2,000 : ¥4.00214 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	161A (Tc)	4.5V, 10V	3.3mOhm @ 15A, 10V	2.3V @ 250µA	50 nC @ 4.5 V	±20V	4380 pF @ 15 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.