Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesNexperia USA Inc.Vishay Siliconix
Series
-OptiMOS™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V80 V200 V
Current - Continuous Drain (Id) @ 25°C
2.2A (Ta)3.2A (Ta)18.3A (Tc)300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
1.2mOhm @ 100A, 10V60mOhm @ 10A, 10V80mOhm @ 4A, 10V117mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
2.7V @ 250µA3V @ 250µA3.8V @ 275µA4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V40 nC @ 10 V42 nC @ 10 V231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
196 pF @ 30 V1710 pF @ 25 V16250 pF @ 40 V
Power Dissipation (Max)
615mW (Ta), 7.5W (Tc)1.9W (Ta)2.3W (Ta), 38.5W (Tc)375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-HSOG-8-1PowerPAK® SO-8TO-236ABTO-252AA
Package / Case
8-PowerSMD, Gull WingPowerPAK® SO-8TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPAK SO-8
SI7450DP-T1-E3
MOSFET N-CH 200V 3.2A PPAK SO-8
Vishay Siliconix
5,951
In Stock
1 : ¥22.91000
Cut Tape (CT)
3,000 : ¥10.31359
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
3.2A (Ta)
6V, 10V
80mOhm @ 4A, 10V
4.5V @ 250µA
42 nC @ 10 V
±20V
-
-
1.9W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
3,327
In Stock
1 : ¥50.41000
Cut Tape (CT)
1,800 : ¥26.05847
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
300A (Tc)
6V, 10V
1.2mOhm @ 100A, 10V
3.8V @ 275µA
231 nC @ 10 V
±20V
16250 pF @ 40 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-HSOG-8-1
8-PowerSMD, Gull Wing
TO-236AB
PMV88ENEAR
MOSFET N-CH 60V 2.2A TO236AB
Nexperia USA Inc.
7,161
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.76431
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2.2A (Ta)
4.5V, 10V
117mOhm @ 2.2A, 10V
2.7V @ 250µA
6 nC @ 10 V
±20V
196 pF @ 30 V
-
615mW (Ta), 7.5W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
TO-252
SUD19P06-60-E3
MOSFET P-CH 60V 18.3A TO252
Vishay Siliconix
3,763
In Stock
1 : ¥9.28000
Cut Tape (CT)
2,000 : ¥3.84827
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
18.3A (Tc)
4.5V, 10V
60mOhm @ 10A, 10V
3V @ 250µA
40 nC @ 10 V
±20V
1710 pF @ 25 V
-
2.3W (Ta), 38.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.