Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedInfineon TechnologiesRohm Semiconductor
Series
-HEXFET®OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
31A (Tc)35A (Tc)43A (Tc)90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
9mOhm @ 20A, 10V18mOhm @ 33A, 10V23mOhm @ 35A, 10V39mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA3.5V @ 33µA4V @ 1mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12.4 nC @ 10 V20 nC @ 4.5 V25 nC @ 10 V56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 50 V1690 pF @ 25 V1800 pF @ 50 V2309 pF @ 50 V
Power Dissipation (Max)
1.7W (Ta)3W (Ta), 110W (Tc)50W (Tc)71W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
PG-TO252-3TO-252TO-252 (DPAK)TO-252AA (DPAK)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO252-3
IRFR3410TRPBF
MOSFET N-CH 100V 31A DPAK
Infineon Technologies
16,100
In Stock
1 : ¥8.37000
Cut Tape (CT)
2,000 : ¥3.45099
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
31A (Tc)
10V
39mOhm @ 18A, 10V
4V @ 250µA
56 nC @ 10 V
±20V
1690 pF @ 25 V
-
3W (Ta), 110W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 D-Pak Top
DMT10H009LK3-13
MOSFET BVDSS: 61V~100V TO252 T&R
Diodes Incorporated
2,135
In Stock
1,547,500
Factory
1 : ¥9.28000
Cut Tape (CT)
2,500 : ¥3.83500
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
90A (Tc)
4.5V, 10V
9mOhm @ 20A, 10V
2.5V @ 250µA
20 nC @ 4.5 V
±20V
2309 pF @ 50 V
-
1.7W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IPD180N10N3GATMA1
MOSFET N-CH 100V 43A TO252-3
Infineon Technologies
4,056
In Stock
1 : ¥9.85000
Cut Tape (CT)
2,500 : ¥4.08822
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
43A (Tc)
6V, 10V
18mOhm @ 33A, 10V
3.5V @ 33µA
25 nC @ 10 V
±20V
1800 pF @ 50 V
-
71W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
RB098BM-40FNSTL
RD3P03BBHTL1
NCH 100V 35A, TO-252, POWER MOSF
Rohm Semiconductor
2,142
In Stock
1 : ¥13.87000
Cut Tape (CT)
2,500 : ¥6.25302
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
35A (Tc)
6V, 10V
23mOhm @ 35A, 10V
4V @ 1mA
12.4 nC @ 10 V
±20V
800 pF @ 50 V
-
50W (Tc)
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.