Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedInfineon Technologiesonsemi
Series
-CoolSiC™OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
30 V60 V650 V
Current - Continuous Drain (Id) @ 25°C
300mA (Ta)500mA (Ta)2.4A (Ta)35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4V4.5V, 10V18V
Rds On (Max) @ Id, Vgs
74mOhm @ 16.7A, 18V155mOhm @ 2A, 10V1.5Ohm @ 10mA, 4V3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.4V @ 250µA2.5V @ 250µA3V @ 250µA5.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 10 V1.15 nC @ 5 V8.3 nC @ 10 V28 nC @ 18 V
Vgs (Max)
+20V, -2V±20V
Input Capacitance (Ciss) (Max) @ Vds
20 pF @ 25 V21 pF @ 5 V512 pF @ 30 V930 pF @ 400 V
Power Dissipation (Max)
500mW (Ta)690mW (Ta)920mW133W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-SOT23PG-TO247-3-41SOT-23-3SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
2N7002H6327XTSA2
MOSFET N-CH 60V 300MA SOT23-3
Infineon Technologies
115,723
In Stock
1 : ¥2.38000
Cut Tape (CT)
3,000 : ¥0.39582
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300mA (Ta)
4.5V, 10V
3Ohm @ 500mA, 10V
2.5V @ 250µA
0.6 nC @ 10 V
±20V
20 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT 23-3
NTR4003NT3G
MOSFET N-CH 30V 500MA SOT23-3
onsemi
141,695
In Stock
1 : ¥2.79000
Cut Tape (CT)
10,000 : ¥0.42056
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
500mA (Ta)
2.5V, 4V
1.5Ohm @ 10mA, 4V
1.4V @ 250µA
1.15 nC @ 5 V
±20V
21 pF @ 5 V
-
690mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMPH6250S-13
MOSFET P-CH 60V 2.4A SOT23
Diodes Incorporated
3,982
In Stock
50,000
Factory
1 : ¥3.37000
Cut Tape (CT)
10,000 : ¥0.77552
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
2.4A (Ta)
4.5V, 10V
155mOhm @ 2A, 10V
3V @ 250µA
8.3 nC @ 10 V
±20V
512 pF @ 30 V
-
920mW
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
IMW65R039M1HXKSA1
IMW65R057M1HXKSA1
SILICON CARBIDE MOSFET, PG-TO247
Infineon Technologies
88
In Stock
1 : ¥76.35000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
35A (Tc)
18V
74mOhm @ 16.7A, 18V
5.7V @ 5mA
28 nC @ 18 V
+20V, -2V
930 pF @ 400 V
-
133W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
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of 4

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.