Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesRohm SemiconductorVishay Siliconix
Series
-OptiMOS™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
8A (Ta), 40A (Tc)13.2A (Tc)40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
15.6mOhm @ 40A, 10V16mOhm @ 20A, 10V134mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA3.5V @ 12µA4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
16.7 nC @ 10 V25 nC @ 10 V55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1080 pF @ 50 V1480 pF @ 50 V1700 pF @ 50 V
Power Dissipation (Max)
2.1W (Ta), 63W (Tc)3.7W (Ta), 52W (Tc)59W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-50°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
8-HSMT (3.2x3)PG-TSDSON-8PowerPAK® 1212-8
Package / Case
8-PowerTDFN8-PowerVDFNPowerPAK® 1212-8
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSZ160N10NS3GATMA1
MOSFET N-CH 100V 8A/40A 8TSDSON
Infineon Technologies
41,640
In Stock
1 : ¥12.81000
Cut Tape (CT)
5,000 : ¥5.04048
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
8A (Ta), 40A (Tc)
6V, 10V
16mOhm @ 20A, 10V
3.5V @ 12µA
25 nC @ 10 V
±20V
1700 pF @ 50 V
-
2.1W (Ta), 63W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
PowerPAK 1212-8
SI7113DN-T1-E3
MOSFET P-CH 100V 13.2A PPAK
Vishay Siliconix
15,546
In Stock
1 : ¥22.99000
Cut Tape (CT)
3,000 : ¥10.36655
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
13.2A (Tc)
4.5V, 10V
134mOhm @ 4A, 10V
3V @ 250µA
55 nC @ 10 V
±20V
1480 pF @ 50 V
-
3.7W (Ta), 52W (Tc)
-50°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
8-HSMT
RH6P040BHTB1
NCH 100V 40A, HSMT8, POWER MOSFE
Rohm Semiconductor
5,435
In Stock
1 : ¥14.53000
Cut Tape (CT)
3,000 : ¥4.57182
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
40A (Tc)
6V, 10V
15.6mOhm @ 40A, 10V
4V @ 1mA
16.7 nC @ 10 V
±20V
1080 pF @ 50 V
-
59W (Tc)
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.