Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesToshiba Semiconductor and Storage
Series
HEXFET®U-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V20 V
Current - Continuous Drain (Id) @ 25°C
800mA (Ta)4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V1.8V, 4.5V
Rds On (Max) @ Id, Vgs
50mOhm @ 4.3A, 4.5V235mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id
950mV @ 250µA1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
1 nC @ 4.5 V15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
55 pF @ 10 V830 pF @ 10 V
Power Dissipation (Max)
150mW (Ta)1.3W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
Micro3™/SOT-23SSM
Package / Case
SC-75, SOT-416TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
4,630,288
In Stock
1 : ¥2.05000
Cut Tape (CT)
3,000 : ¥0.37221
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
800mA (Ta)
1.5V, 4.5V
235mOhm @ 800mA, 4.5V
1V @ 1mA
1 nC @ 4.5 V
±8V
55 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
SSM
SC-75, SOT-416
SOT-23-3
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
Infineon Technologies
111,131
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.88633
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
4.3A (Ta)
1.8V, 4.5V
50mOhm @ 4.3A, 4.5V
950mV @ 250µA
15 nC @ 5 V
±8V
830 pF @ 10 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.