Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedonsemiTexas Instruments
Series
-NexFET™PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V20 V100 V
Current - Continuous Drain (Id) @ 25°C
750mA (Ta)1.6A (Ta)2.4A (Ta)7A (Ta), 18A (Tc)17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
17.1mOhm @ 1A, 4.5V24mOhm @ 6.5A, 10V52mOhm @ 2.4A, 4.5V81mOhm @ 17A, 10V550mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA1.3V @ 250µA1.5V @ 250µA2.2V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.5 nC @ 4.5 V7.8 nC @ 4.5 V20 nC @ 4.5 V20 nC @ 10 V22 nC @ 10 V
Vgs (Max)
±8V±10V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
36 pF @ 16 V620 pF @ 25 V862 pF @ 6 V1290 pF @ 50 V1312 pF @ 10 V
Power Dissipation (Max)
470mW (Ta)500mW (Ta)1.8W (Ta)2.3W (Ta), 41W (Tc)71W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
4-DSBGA (1x1)8-MLP (3.3x3.3)DPAKSOT-23-3X1-DFN1006-3
Package / Case
3-UFDFN4-UFBGA, DSBGA8-PowerWDFNTO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
5Results

Showing
of 5
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
X2-DFN1006-3
DMN2400UFB-7
MOSFET N-CH 20V 750MA 3DFN
Diodes Incorporated
643,008
In Stock
468,000
Factory
1 : ¥2.63000
Cut Tape (CT)
3,000 : ¥0.51311
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
750mA (Ta)
1.8V, 4.5V
550mOhm @ 600mA, 4.5V
900mV @ 250µA
0.5 nC @ 4.5 V
±12V
36 pF @ 16 V
-
470mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
X1-DFN1006-3
3-UFDFN
SOT-23-3
FDN304P
MOSFET P-CH 20V 2.4A SUPERSOT3
onsemi
29,518
In Stock
1 : ¥4.43000
Cut Tape (CT)
3,000 : ¥1.48113
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
2.4A (Ta)
1.8V, 4.5V
52mOhm @ 2.4A, 4.5V
1.5V @ 250µA
20 nC @ 4.5 V
±8V
1312 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-MLP, Power33
FDMC86102LZ
MOSFET N-CH 100V 7A/18A 8MLP
onsemi
5,767
In Stock
1 : ¥14.29000
Cut Tape (CT)
3,000 : ¥6.45042
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
7A (Ta), 18A (Tc)
4.5V, 10V
24mOhm @ 6.5A, 10V
2.2V @ 250µA
22 nC @ 10 V
±20V
1290 pF @ 50 V
-
2.3W (Ta), 41W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-MLP (3.3x3.3)
8-PowerWDFN
4-DSBGA-YZB
CSD13302W
MOSFET N-CH 12V 1.6A 4DSBGA
Texas Instruments
5,236
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.90839
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
12 V
1.6A (Ta)
2.5V, 4.5V
17.1mOhm @ 1A, 4.5V
1.3V @ 250µA
7.8 nC @ 4.5 V
±10V
862 pF @ 6 V
-
1.8W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
4-DSBGA (1x1)
4-UFBGA, DSBGA
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NTD6416ANT4G
MOSFET N-CH 100V 17A DPAK
onsemi
12,644
In Stock
5,000
Factory
1 : ¥9.85000
Cut Tape (CT)
2,500 : ¥4.05991
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
17A (Tc)
10V
81mOhm @ 17A, 10V
4V @ 250µA
20 nC @ 10 V
±20V
620 pF @ 25 V
-
71W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 5

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.