Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSS138 MOSFET N-CH 50V 220MA SOT23-3 onsemi	116,393 In Stock	1 : ¥2.87000 Cut Tape (CT) 3,000 : ¥0.48928 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	220mA (Ta)	4.5V, 10V	3Ohm @ 500mA, 10V	1.6V @ 250µA	2.4 nC @ 10 V	±20V	27 pF @ 25 V	-	350mW (Ta)	150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SI1308EDL-T1-GE3 MOSFET N-CH 30V 1.4A SOT323 Vishay Siliconix	35,235 In Stock	1 : ¥3.61000 Cut Tape (CT) 3,000 : ¥0.97327 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	1.4A (Tc)	2.5V, 10V	132mOhm @ 1.4A, 10V	1.5V @ 250µA	4.1 nC @ 10 V	±12V	105 pF @ 15 V	-	400mW (Ta), 500mW (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3	SC-70, SOT-323
RE1L002SNTL MOSFET N-CH 60V 250MA EMT3F Rohm Semiconductor	45,803 In Stock	1 : ¥3.12000 Cut Tape (CT) 3,000 : ¥0.53142 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	250mA (Ta)	10V	2.4Ohm @ 250mA, 10V	2.3V @ 1mA	-	±20V	15 pF @ 25 V	-	150mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	EMT3F (SOT-416FL)	SC-89, SOT-490
RQ5E020SPTL MOSFET P-CH 30V 2A TSMT3 Rohm Semiconductor	2,470 In Stock	1 : ¥4.60000 Cut Tape (CT) 3,000 : ¥1.55327 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	2A (Ta)	4V, 10V	120mOhm @ 2A, 10V	2.5V @ 1mA	4.3 nC @ 5 V	±20V	370 pF @ 10 V	-	700mW (Ta)	150°C (TJ)	Surface Mount	TSMT3	SC-96
SIHD2N80E-GE3 MOSFET N-CH 800V 2.8A DPAK Vishay Siliconix	1 In Stock	1 : ¥11.25000 Tube	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	2.8A (Tc)	10V	2.75Ohm @ 1A, 10V	4V @ 250µA	19.6 nC @ 10 V	±30V	315 pF @ 100 V	-	62.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.