Single FETs, MOSFETs

Results: 3
Manufacturer
Alpha & Omega Semiconductor Inc.Infineon TechnologiesRohm Semiconductor
Series
-AlphaSGT™OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
230mA (Ta)15A (Ta), 50A (Tc)41A (Tj)
Rds On (Max) @ Id, Vgs
9mOhm @ 15A, 10V10mOhm @ 20A, 10V5.3Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id
2.2V @ 13µA2.5V @ 100µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16.4 nC @ 10 V46 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
34 pF @ 30 V1205 pF @ 30 V2180 pF @ 50 V
Power Dissipation (Max)
200mW (Ta)4.1W (Ta), 52W (Tc)42W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
8-DFN-EP (3.3x3.3)PG-TDSON-8-33SST3
Package / Case
8-PowerTDFN8-PowerWDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-DFN-EP
AONR66922
MOSFET N-CH 100V 15A/50A 8DFN
Alpha & Omega Semiconductor Inc.
4,872
In Stock
1 : ¥11.33000
Cut Tape (CT)
3,000 : ¥4.69716
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
15A (Ta), 50A (Tc)
4.5V, 10V
9mOhm @ 15A, 10V
2.5V @ 250µA
46 nC @ 10 V
±20V
2180 pF @ 50 V
-
4.1W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN-EP (3.3x3.3)
8-PowerWDFN
RUC002N05T116
BSS84AHZGT116
PCH -60V -0.23A, SOT-23, SMALL S
Rohm Semiconductor
8,958
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥0.83119
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
230mA (Ta)
4.5V, 10V
5.3Ohm @ 230mA, 10V
2.5V @ 100µA
-
±20V
34 pF @ 30 V
-
200mW (Ta)
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
TDSON833
IAUC41N06S5L100ATMA1
MOSFET N-CH 60V 41A TDSON-8-33
Infineon Technologies
28,837
In Stock
1 : ¥7.72000
Cut Tape (CT)
5,000 : ¥2.77390
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
41A (Tj)
-
10mOhm @ 20A, 10V
2.2V @ 13µA
16.4 nC @ 10 V
±16V
1205 pF @ 30 V
-
42W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TDSON-8-33
8-PowerTDFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.