Single FETs, MOSFETs

Results: 4

Filters

Stacked

Scrolling

Showing

of 4

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SSM3J328R,LF MOSFET P-CH 20V 6A SOT23F Toshiba Semiconductor and Storage	767,389 In Stock	1 : ¥3.37000 Cut Tape (CT) 3,000 : ¥0.73442 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	6A (Ta)	1.5V, 4.5V	29.8mOhm @ 3A, 4.5V	1V @ 1mA	12.8 nC @ 4.5 V	±8V	840 pF @ 10 V	-	1W (Ta)	150°C (TJ)	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
AO3401A MOSFET P-CH 30V 4A SOT23-3L Alpha & Omega Semiconductor Inc.	746,784 In Stock	1 : ¥3.61000 Cut Tape (CT) 3,000 : ¥0.80150 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	4A (Ta)	2.5V, 10V	44mOhm @ 4.3A, 10V	1.3V @ 250µA	12.2 nC @ 4.5 V	±12V	1200 pF @ 15 V	-	1.4W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	3-SMD, SOT-23-3 Variant
SSM3K15AFU,LF MOSFET N-CH 30V 100MA USM Toshiba Semiconductor and Storage	63,557 In Stock	1 : ¥1.64000 Cut Tape (CT) 3,000 : ¥0.32440 Tape & Reel (TR)	U-MOSIII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	100mA (Ta)	2.5V, 4V	3.6Ohm @ 10mA, 4V	1.5V @ 100µA	-	±20V	13.5 pF @ 3 V	-	150mW (Ta)	150°C (TJ)	Surface Mount	USM	SC-70, SOT-323
RU1L002SNTL MOSFET N-CH 60V 250MA UMT3F Rohm Semiconductor	21,132 In Stock	1 : ¥2.22000 Cut Tape (CT) 3,000 : ¥0.37357 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	250mA (Ta)	2.5V, 10V	2.4Ohm @ 250mA, 10V	2.3V @ 1mA	-	±20V	15 pF @ 25 V	-	200mW (Ta)	150°C (TJ)	Surface Mount	UMT3F	SC-85

Showing

of 4

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.