Single FETs, MOSFETs

Results: 9
Manufacturer
Diodes IncorporatedFairchild SemiconductorInfineon TechnologiesonsemiSTMicroelectronicsVishay Siliconix
Series
-CoolMOS™DeepGATE™, STripFET™ VIIHEXFET®
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveLast Time Buy
Drain to Source Voltage (Vdss)
20 V30 V60 V80 V100 V400 V500 V600 V650 V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)370mA (Ta)490mA (Ta)1A (Tc)1.7A (Ta)1.8A (Ta)20.7A (Tc)33A (Tc)180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V4.5V, 10V5V, 10V10V
Rds On (Max) @ Id, Vgs
2.5mOhm @ 90A, 10V44mOhm @ 16A, 10V120mOhm @ 2.5A, 10V180mOhm @ 930mA, 4.5V190mOhm @ 13.1A, 10V1.8Ohm @ 210mA, 10V3Ohm @ 220mA, 10V7.5Ohm @ 500mA, 10V12Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)1V @ 250µA2.5V @ 250µA3.9V @ 1mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.4 nC @ 4.5 V3.9 nC @ 10 V7.7 nC @ 10 V20 nC @ 10 V24 nC @ 10 V71 nC @ 10 V114 nC @ 10 V193 nC @ 10 V
Vgs (Max)
±12V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V160 pF @ 15 V190 pF @ 25 V215 pF @ 25 V360 pF @ 25 V410 pF @ 25 V1960 pF @ 25 V2400 pF @ 25 V13600 pF @ 50 V
Power Dissipation (Max)
200mW (Ta)625mW (Ta)1W (Ta)34W (Tc)130W (Tc)208W (Tc)315W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
4-HVMDIPPG-TO247-3-1SOT-23-3TO-220TO-220AB
Package / Case
4-DIP (0.300", 7.62mm)TO-220-3TO-236-3, SC-59, SOT-23-3TO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
ZXMN3A01FTA
MOSFET N-CH 30V 1.8A SOT23-3
Diodes Incorporated
89,633
In Stock
57,000
Factory
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥1.24606
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
1.8A (Ta)
4.5V, 10V
120mOhm @ 2.5A, 10V
1V @ 250µA
3.9 nC @ 10 V
±20V
190 pF @ 25 V
-
625mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2N7002
MOSFET SOT23 N 60V 5OHM 150C
onsemi
80,981
In Stock
30,000
Factory
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.98624
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
ZXM61N02FTA
MOSFET N-CH 20V 1.7A SOT23-3
Diodes Incorporated
32,429
In Stock
1,668,000
Factory
1 : ¥3.94000
Cut Tape (CT)
3,000 : ¥1.05767
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1.7A (Ta)
2.7V, 4.5V
180mOhm @ 930mA, 4.5V
700mV @ 250µA (Min)
3.4 nC @ 4.5 V
±12V
160 pF @ 15 V
-
625mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-220AB PKG
IRF540NPBF
MOSFET N-CH 100V 33A TO220AB
Infineon Technologies
135,299
In Stock
1 : ¥7.14000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
33A (Tc)
10V
44mOhm @ 16A, 10V
4V @ 250µA
71 nC @ 10 V
±20V
1960 pF @ 25 V
-
130W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PG-TO247-3
SPW20N60C3FKSA1
MOSFET N-CH 650V 20.7A TO247-3
Infineon Technologies
2,556
In Stock
1 : ¥52.87000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
20.7A (Tc)
10V
190mOhm @ 13.1A, 10V
3.9V @ 1mA
114 nC @ 10 V
±20V
2400 pF @ 25 V
-
208W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-1
TO-247-3
TO-220-3
STP270N8F7
MOSFET N CH 80V 180A TO220
STMicroelectronics
1,022
In Stock
1 : ¥29.14000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
80 V
180A (Tc)
10V
2.5mOhm @ 90A, 10V
4V @ 250µA
193 nC @ 10 V
±20V
13600 pF @ 50 V
-
315W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
INFINFIPAN60R360PFD7SXKSA1
SSP1N60B
N-CHANNEL POWER MOSFET
Fairchild Semiconductor
3,644
Marketplace
Unavailable
Unavailable in your selected currency
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
600 V
1A (Tc)
10V
12Ohm @ 500mA, 10V
4V @ 250µA
7.7 nC @ 10 V
±30V
215 pF @ 25 V
-
34W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
4-DIP
IRFD320PBF
MOSFET N-CH 400V 490MA 4DIP
Vishay Siliconix
2,713
In Stock
1 : ¥14.70000
Tube
-
Tube
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
400 V
490mA (Ta)
10V
1.8Ohm @ 210mA, 10V
4V @ 250µA
20 nC @ 10 V
±20V
410 pF @ 25 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
Through Hole
4-HVMDIP
4-DIP (0.300", 7.62mm)
4-DIP
IRFD420PBF
MOSFET N-CH 500V 370MA 4DIP
Vishay Siliconix
0
In Stock
2,500 : ¥6.61694
Bulk
-
Bulk
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
500 V
370mA (Ta)
10V
3Ohm @ 220mA, 10V
4V @ 250µA
24 nC @ 10 V
±20V
360 pF @ 25 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
Through Hole
4-HVMDIP
4-DIP (0.300", 7.62mm)
Showing
of 9

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.