Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiRohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
100mOhm @ 4A, 10V3.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 100µA2V @ 250µA
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
7.1 pF @ 10 V345 pF @ 25 V
Power Dissipation (Max)
150mW (Ta)3W (Ta)
Operating Temperature
-65°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-223-4VMT3
Package / Case
SOT-723TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
VMT3 Pkg
RUM001L02T2CL
MOSFET N-CH 20V 100MA VMT3
Rohm Semiconductor
726,262
In Stock
This product has a maximum purchase limit
1 : ¥2.22000
Cut Tape (CT)
8,000 : ¥0.34654
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
100mA (Ta)
1.2V, 4.5V
3.5Ohm @ 100mA, 4.5V
1V @ 100µA
-
±8V
7.1 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
VMT3
SOT-723
SOT223-3L
NDT3055L
MOSFET N-CH 60V 4A SOT-223-4
onsemi
0
In Stock
Check Lead Time
1 : ¥8.29000
Cut Tape (CT)
4,000 : ¥3.43402
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
4A (Ta)
4.5V, 10V
100mOhm @ 4A, 10V
2V @ 250µA
20 nC @ 10 V
±20V
345 pF @ 25 V
-
3W (Ta)
-65°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.