Single FETs, MOSFETs

Results: 3
Manufacturer
onsemiWolfspeed, Inc.
Series
C3M™QFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
200 V600 V650 V
Current - Continuous Drain (Id) @ 25°C
200mA (Tc)5.7A (Tc)22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V15V
Rds On (Max) @ Id, Vgs
157mOhm @ 6.76A, 15V690mOhm @ 2.85A, 10V11.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
3.6V @ 1.86mA4V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.2 nC @ 10 V25 nC @ 10 V28 nC @ 15 V
Vgs (Max)
+19V, -8V±30V
Input Capacitance (Ciss) (Max) @ Vds
170 pF @ 25 V640 pF @ 400 V770 pF @ 25 V
Power Dissipation (Max)
2.1W (Tc)2.5W (Ta), 55W (Tc)98W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
SOT-223-4TO-247-3TO-252AA
Package / Case
TO-247-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT223-3L
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
onsemi
22,115
In Stock
1 : ¥5.99000
Cut Tape (CT)
4,000 : ¥2.27457
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
200mA (Tc)
10V
11.5Ohm @ 100mA, 10V
4V @ 250µA
6.2 nC @ 10 V
±30V
170 pF @ 25 V
-
2.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
TO-252AA
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
onsemi
15,740
In Stock
1 : ¥9.36000
Cut Tape (CT)
2,500 : ¥3.86866
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
200 V
5.7A (Tc)
10V
690mOhm @ 2.85A, 10V
5V @ 250µA
25 nC @ 10 V
±30V
770 pF @ 25 V
-
2.5W (Ta), 55W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
C2D10120D
C3M0120065D
650V 120M SIC MOSFET
Wolfspeed, Inc.
425
In Stock
1 : ¥77.34000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
22A (Tc)
15V
157mOhm @ 6.76A, 15V
3.6V @ 1.86mA
28 nC @ 15 V
+19V, -8V
640 pF @ 400 V
-
98W (Tc)
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.