Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedRohm SemiconductorSTMicroelectronics
Series
-MDmesh™ K5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
100 V240 V1500 V
Current - Continuous Drain (Id) @ 25°C
480mA (Ta)7A (Tc)10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
3.5V, 10V4V, 10V10V
Rds On (Max) @ Id, Vgs
133mOhm @ 5A, 10V1.9Ohm @ 3.5A, 10V9Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA2.5V @ 1mA5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V47 nC @ 10 V
Vgs (Max)
±20V±30V±40V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V700 pF @ 25 V1360 pF @ 100 V
Power Dissipation (Max)
2.5W (Ta)20W (Tc)250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
SOT-223-3TO-247-3TO-252
Package / Case
TO-247-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-223-3
ZVP4424GTA
MOSFET P-CH 240V 480MA SOT223
Diodes Incorporated
4,748
In Stock
1 : ¥8.78000
Cut Tape (CT)
1,000 : ¥3.85918
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
240 V
480mA (Ta)
3.5V, 10V
9Ohm @ 200mA, 10V
2V @ 1mA
-
±40V
200 pF @ 25 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223-3
TO-261-4, TO-261AA
RB098BM-40FNSTL
RD3P100SNFRATL
MOSFET N-CH 100V 10A TO252
Rohm Semiconductor
2,634
In Stock
1 : ¥12.89000
Cut Tape (CT)
2,500 : ¥5.31966
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
10A (Ta)
4V, 10V
133mOhm @ 5A, 10V
2.5V @ 1mA
18 nC @ 10 V
±20V
700 pF @ 25 V
-
20W (Tc)
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-247-3 HiP
STW12N150K5
MOSFET N-CH 1500V 7A TO247
STMicroelectronics
520
In Stock
1 : ¥68.88000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1500 V
7A (Tc)
10V
1.9Ohm @ 3.5A, 10V
5V @ 100µA
47 nC @ 10 V
±30V
1360 pF @ 100 V
-
250W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.