Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedNexperia USA Inc.onsemiVishay Siliconix
Series
-TrenchFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)2.3A (Tc)3A (Ta)23A (Ta), 107A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4V, 10V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
3mOhm @ 40A, 10V4.8mOhm @ 25A, 10V85mOhm @ 1.5A, 10V100mOhm @ 1.5A, 4.5V150mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id
900mV @ 250µA2V @ 250µA2.5V @ 250µA3V @ 250µA4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
5.3 nC @ 10 V6 nC @ 4.5 V12.3 nC @ 10 V35 nC @ 10 V73.1 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
205 pF @ 30 V443 pF @ 6 V606 pF @ 20 V2100 pF @ 25 V5520 pF @ 25 V
Power Dissipation (Max)
490mW600mW (Ta)2W (Tc)3.3W (Ta), 68W (Tc)238W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-WDFN (3.3x3.3)LFPAK56, Power-SO8SOT-23-3 (TO-236)SOT-323X1-DFN1616-6 (Type E)
Package / Case
6-PowerUFDFN8-PowerWDFNSC-100, SOT-669SC-70, SOT-323TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-323
DMP2110UW-7
MOSFET P-CH 20V 2A SOT323
Diodes Incorporated
17,982
In Stock
267,000
Factory
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥0.63984
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
2A (Ta)
1.8V, 4.5V
100mOhm @ 1.5A, 4.5V
900mV @ 250µA
6 nC @ 4.5 V
±12V
443 pF @ 6 V
-
490mW
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-323
SC-70, SOT-323
LFPAK56/POWER-SO8/SOT669
BUK7Y4R8-60EX
MOSFET N-CH 60V 100A LFPAK56
Nexperia USA Inc.
3,119
In Stock
1 : ¥15.11000
Cut Tape (CT)
1,500 : ¥7.17170
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Tc)
10V
4.8mOhm @ 25A, 10V
4V @ 1mA
73.1 nC @ 10 V
±20V
5520 pF @ 25 V
-
238W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
X1-DFN1616-6
DMN6070SFCL-7
MOSFET N-CH 60V 3A X1-DFN1616-6
Diodes Incorporated
3,318
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥1.20096
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
3A (Ta)
4V, 10V
85mOhm @ 1.5A, 10V
3V @ 250µA
12.3 nC @ 10 V
±20V
606 pF @ 20 V
-
600mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
X1-DFN1616-6 (Type E)
6-PowerUFDFN
SOT-23-3
SQ2308CES-T1_GE3
MOSFET N-CH 60V 2.3A SOT23
Vishay Siliconix
31,038
In Stock
1 : ¥7.72000
Cut Tape (CT)
3,000 : ¥1.86683
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
60 V
2.3A (Tc)
4.5V, 10V
150mOhm @ 2.3A, 10V
2.5V @ 250µA
5.3 nC @ 10 V
±20V
205 pF @ 30 V
-
2W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
8-WDFN
NTTFS5C453NLTAG
MOSFET N-CH 40V 23A/107A 8WDFN
onsemi
619
In Stock
1 : ¥8.13000
Cut Tape (CT)
1,500 : ¥3.45939
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
23A (Ta), 107A (Tc)
4.5V, 10V
3mOhm @ 40A, 10V
2V @ 250µA
35 nC @ 10 V
±20V
2100 pF @ 25 V
-
3.3W (Ta), 68W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.