Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes Incorporatedonsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
460mA (Ta)750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
90mOhm @ 1.2A, 10V700mOhm @ 350mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA2.4V @ 250µA
Vgs (Max)
±6V±20V
Input Capacitance (Ciss) (Max) @ Vds
59.76 pF @ 16 V125 pF @ 5 V
Power Dissipation (Max)
270mW (Ta)400mW (Ta)
Supplier Device Package
SOT-23-3 (TO-236)SOT-523
Package / Case
SOT-523TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-523
DMG1013T-7
MOSFET P-CH 20V 460MA SOT523
Diodes Incorporated
366,241
In Stock
6,753,000
Factory
1 : ¥2.46000
Cut Tape (CT)
3,000 : ¥0.41074
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
460mA (Ta)
1.8V, 4.5V
700mOhm @ 350mA, 4.5V
1V @ 250µA
0.622 nC @ 4.5 V
±6V
59.76 pF @ 16 V
-
270mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
SOT 23-3
MGSF1N02LT1G
MOSFET N-CH 20V 750MA SOT23-3
onsemi
23,819
In Stock
1 : ¥4.27000
Cut Tape (CT)
3,000 : ¥1.15624
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
750mA (Ta)
4.5V, 10V
90mOhm @ 1.2A, 10V
2.4V @ 250µA
-
±20V
125 pF @ 5 V
-
400mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.