Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
320mA (Ta)4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4V1.8V, 4.5V
Rds On (Max) @ Id, Vgs
52mOhm @ 4.2A, 4.5V2Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id
900mV @ 250µA1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.9 nC @ 4.5 V10.2 nC @ 4.5 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
64 pF @ 25 V808 pF @ 15 V
Power Dissipation (Max)
500mW (Ta)1.4W (Ta)
Supplier Device Package
SOT-23-3X1-DFN1006-3
Package / Case
3-UFDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMG2305UX-13
MOSFET P-CH 20V 4.2A SOT23
Diodes Incorporated
357,727
In Stock
2,670,000
Factory
1 : ¥3.12000
Cut Tape (CT)
10,000 : ¥0.40486
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.2A (Ta)
1.8V, 4.5V
52mOhm @ 4.2A, 4.5V
900mV @ 250µA
10.2 nC @ 4.5 V
±8V
808 pF @ 15 V
-
1.4W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
X2-DFN1006-3
DMN62D1LFB-7B
MOSFET N-CH 60V 320MA 3DFN
Diodes Incorporated
111,377
In Stock
3,470,000
Factory
1 : ¥3.20000
Cut Tape (CT)
10,000 : ¥0.47501
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
320mA (Ta)
1.5V, 4V
2Ohm @ 100mA, 4V
1V @ 250µA
0.9 nC @ 4.5 V
±20V
64 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
X1-DFN1006-3
3-UFDFN
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.