Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

EPC2051 GANFET N-CH 100V 1.7A DIE EPC	34,866 In Stock	1 : ¥10.43000 Cut Tape (CT) 2,500 : ¥4.30102 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	1.7A (Ta)	5V	25mOhm @ 3A, 5V	2.5V @ 1.5mA	2.1 nC @ 5 V	+6V, -4V	258 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
NTMFS5C673NLT1G MOSFET N-CH 60V 5DFN onsemi	2,868 In Stock 72,000 Factory	1 : ¥6.65000 Cut Tape (CT) 1,500 : ¥2.84979 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	50A (Tc)	4.5V, 10V	9.2mOhm @ 25A, 10V	2V @ 35µA	9.5 nC @ 10 V	±20V	880 pF @ 25 V	-	3.6W (Ta), 46W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.