Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedInfineon Technologiesonsemi
Series
-OptiMOS™PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V80 V100 V
Current - Continuous Drain (Id) @ 25°C
4A (Ta)10.6A (Ta), 71A (Tc)120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
2.4mOhm @ 100A, 10V12.3mOhm @ 50A, 10V31mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA2.4V @ 72µA4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15.8 nC @ 4.5 V68 nC @ 10 V178 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
1357 pF @ 10 V4900 pF @ 50 V13530 pF @ 40 V
Power Dissipation (Max)
800mW (Ta)114W (Tc)246W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TDSON-8-1SOT-23-3TO-263-7
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3TO-263-7, D2PAK (6 Leads + Tab)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PG-TDSON-8-1
BSC123N10LSGATMA1
MOSFET N-CH 100V 10.6/71A 8TDSON
Infineon Technologies
16,610
In Stock
1 : ¥13.63000
Cut Tape (CT)
5,000 : ¥5.37141
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
10.6A (Ta), 71A (Tc)
4.5V, 10V
12.3mOhm @ 50A, 10V
2.4V @ 72µA
68 nC @ 10 V
±20V
4900 pF @ 50 V
-
114W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
TO-263
FDB024N08BL7
MOSFET N-CH 80V 120A TO263-7
onsemi
7,552
In Stock
88,000
Factory
1 : ¥37.60000
Cut Tape (CT)
800 : ¥22.69200
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
120A (Tc)
10V
2.4mOhm @ 100A, 10V
4.5V @ 250µA
178 nC @ 10 V
±20V
13530 pF @ 40 V
-
246W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-7, D2PAK (6 Leads + Tab)
SOT-23-3
DMP1045U-7
MOSFET P-CH 12V 4A SOT23
Diodes Incorporated
9,594
In Stock
1,728,000
Factory
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥0.75610
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
4A (Ta)
1.8V, 4.5V
31mOhm @ 4A, 4.5V
1V @ 250µA
15.8 nC @ 4.5 V
±8V
1357 pF @ 10 V
-
800mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.