Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesToshiba Semiconductor and StorageVishay Siliconix
Series
OptiMOS™ 5OptiMOS™-5StrongIRFET™ 2TrenchFET®U-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V80 V100 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)3.8A (Ta), 5.4A (Tc)16A (Ta), 99A (Tc)33A (Ta), 294A (Tc)180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 100A, 10V1.75mOhm @ 150A, 10V5mOhm @ 20A, 10V82.7mOhm @ 3.8A, 10V3.9Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA2.5V @ 250µA3.8V @ 216µA3.8V @ 49µA4.1V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
0.35 nC @ 4.5 V18 nC @ 10 V44 nC @ 10 V195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
17 pF @ 10 V805 pF @ 40 V840 pF @ 50 V2900 pF @ 40 V9300 pF @ 50 V
Power Dissipation (Max)
320mW (Ta)2W (Ta), 4.2W (Tc)2.5W (Ta), 100W (Tc)3.8W (Ta), 300W (Tc)313W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
6-TSOPPG-HSOF-8-10PG-TO263-7PG-WHTFN-9-1SOT-23-3
Package / Case
8-PowerSFN9-PowerWDFNSOT-23-6 Thin, TSOT-23-6TO-236-3, SC-59, SOT-23-3TO-263-7, D2PAK (6 Leads + Tab)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-263-7, D2Pak
IPB017N10N5LFATMA1
MOSFET N-CH 100V 180A TO263-7
Infineon Technologies
1,685
In Stock
1 : ¥62.89000
Cut Tape (CT)
1,000 : ¥35.67997
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
10V
1.7mOhm @ 100A, 10V
4.1V @ 270µA
195 nC @ 10 V
±20V
840 pF @ 50 V
-
313W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-7
TO-263-7, D2PAK (6 Leads + Tab)
496,460
In Stock
1 : ¥1.15000
Cut Tape (CT)
3,000 : ¥0.19994
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
200mA (Ta)
4.5V, 10V
3.9Ohm @ 100mA, 10V
2.1V @ 250µA
0.35 nC @ 4.5 V
±20V
17 pF @ 10 V
-
320mW (Ta)
150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
1,249
In Stock
1 : ¥34.32000
Cut Tape (CT)
1,800 : ¥16.02654
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
33A (Ta), 294A (Tc)
6V, 10V
1.75mOhm @ 150A, 10V
3.8V @ 216µA
195 nC @ 10 V
±20V
9300 pF @ 50 V
-
3.8W (Ta), 300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-8-10
8-PowerSFN
SI3129DV-T1-GE3
SI3129DV-T1-GE3
P-CHANNEL 80 V (D-S) MOSFET TSOP
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥5.34000
Cut Tape (CT)
3,000 : ¥2.03942
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
80 V
3.8A (Ta), 5.4A (Tc)
4.5V, 10V
82.7mOhm @ 3.8A, 10V
2.5V @ 250µA
18 nC @ 10 V
±20V
805 pF @ 40 V
-
2W (Ta), 4.2W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
IQE050N08NM5CGSCATMA1
IQE050N08NM5CGSCATMA1
OPTIMOS LOWVOLTAGE POWER MOSFET
Infineon Technologies
0
In Stock
Check Lead Time
1 : ¥24.22000
Cut Tape (CT)
6,000 : ¥11.31209
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
16A (Ta), 99A (Tc)
6V, 10V
5mOhm @ 20A, 10V
3.8V @ 49µA
44 nC @ 10 V
±20V
2900 pF @ 40 V
-
2.5W (Ta), 100W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-WHTFN-9-1
9-PowerWDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.