Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

2N7002,215 MOSFET N-CH 60V 300MA TO236AB Nexperia USA Inc.	585,965 In Stock	1 : ¥2.22000 Cut Tape (CT) 3,000 : ¥0.37854 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	300mA (Tc)	10V	5Ohm @ 500mA, 10V	2.5V @ 250µA	-	±30V	50 pF @ 10 V	-	830mW (Ta)	-65°C ~ 150°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
BSC117N08NS5ATMA1 MOSFET N-CH 80V 49A TDSON Infineon Technologies	5,226 In Stock	1 : ¥11.82000 Cut Tape (CT) 5,000 : ¥4.64471 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	49A (Tc)	6V, 10V	11.7mOhm @ 25A, 10V	3.8V @ 22µA	18 nC @ 10 V	±20V	1300 pF @ 40 V	-	2.5W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-7	8-PowerTDFN
SSM3J35MFV,L3F MOSFET P-CH 20V 100MA VESM Toshiba Semiconductor and Storage	64,615 In Stock	1 : ¥1.64000 Cut Tape (CT) 8,000 : ¥0.27700 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	100mA (Ta)	-	8Ohm @ 50mA, 4V	-	-	-	12.2 pF @ 3 V	-	150mW (Ta)	150°C (TJ)	Surface Mount	VESM	SOT-723
RSM002N06T2L MOSFET N-CH 60V 250MA VMT3 Rohm Semiconductor	30,084 In Stock This product has a maximum purchase limit	1 : ¥3.37000 Cut Tape (CT) 8,000 : ¥0.58290 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	250mA (Ta)	2.5V, 10V	2.4Ohm @ 250mA, 10V	2.3V @ 1mA	-	±20V	15 pF @ 25 V	-	150mW (Ta)	150°C (TJ)	Surface Mount	VMT3	SOT-723
RQ5H020TNTL MOSFET N-CH 45V 2A TSMT3 Rohm Semiconductor	3,250 In Stock	1 : ¥5.17000 Cut Tape (CT) 3,000 : ¥2.75019 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	45 V	2A (Ta)	2.5V, 4.5V	180mOhm @ 2A, 4.V	1.5V @ 1mA	4.1 nC @ 4.5 V	±12V	200 pF @ 10 V	-	700mW (Ta)	150°C (TJ)	Surface Mount	TSMT3	SC-96
TPN4R806PL,L1Q MOSFET N-CH 60V 72A 8TSON Toshiba Semiconductor and Storage	11,835 In Stock	1 : ¥11.33000 Cut Tape (CT) 5,000 : ¥2.78283 Tape & Reel (TR)	U-MOSIX-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	72A (Tc)	4.5V, 10V	3.5mOhm @ 36A, 10V	2.5V @ 300µA	29 nC @ 10 V	±20V	2770 pF @ 30 V	-	630mW (Ta), 104W (Tc)	175°C	Surface Mount	8-TSON Advance (3.1x3.1)	8-PowerVDFN

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.