Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesSTMicroelectronics
Series
HEXFET®STripFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
100 V250 V
Current - Continuous Drain (Id) @ 25°C
1.6A (Ta)45A (Tc)
Rds On (Max) @ Id, Vgs
69mOhm @ 22A, 10V200mOhm @ 1.6A, 10V
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V68.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 25 V2670 pF @ 25 V
Power Dissipation (Max)
1W (Ta)160W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
SOT-223TO-220
Package / Case
TO-220-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT223-3L
IRFL4310TRPBF
MOSFET N-CH 100V 1.6A SOT223
Infineon Technologies
12,856
In Stock
1 : ¥5.75000
Cut Tape (CT)
2,500 : ¥2.17648
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
1.6A (Ta)
10V
200mOhm @ 1.6A, 10V
4V @ 250µA
25 nC @ 10 V
±20V
330 pF @ 25 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
TO-220-3
STP50NF25
MOSFET N-CH 250V 45A TO220AB
STMicroelectronics
1,329
In Stock
1 : ¥22.08000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
45A (Tc)
10V
69mOhm @ 22A, 10V
4V @ 250µA
68.2 nC @ 10 V
±20V
2670 pF @ 25 V
-
160W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.