Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes Incorporatedonsemi
Series
-QFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
1.6A (Ta)6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
140mOhm @ 1.8A, 10V530mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.6 nC @ 10 V15 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
315 pF @ 40 V470 pF @ 25 V
Power Dissipation (Max)
700mW (Ta)2.5W (Ta), 44W (Tc)
Supplier Device Package
SOT-23-3TO-252AA
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMN6140L-7
MOSFET N-CH 60V 1.6A SOT-23
Diodes Incorporated
139,380
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.56821
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
1.6A (Ta)
4.5V, 10V
140mOhm @ 1.8A, 10V
3V @ 250µA
8.6 nC @ 10 V
±20V
315 pF @ 40 V
-
700mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-252AA
FQD8P10TM
MOSFET P-CH 100V 6.6A DPAK
onsemi
3,504
In Stock
1 : ¥6.49000
Cut Tape (CT)
2,500 : ¥2.46709
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
6.6A (Tc)
10V
530mOhm @ 3.3A, 10V
4V @ 250µA
15 nC @ 10 V
±30V
470 pF @ 25 V
-
2.5W (Ta), 44W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.