Single FETs, MOSFETs

Results: 3
Manufacturer
Good-Ark SemiconductorPanjit International Inc.Vishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
850mA (Ta)8.4A (Ta), 35A (Tc)9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
19mOhm @ 8A, 10V35mOhm @ 5A, 4.5V640mOhm @ 550mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA1.2V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.8 nC @ 4.5 V11 nC @ 4.5 V30 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
58 pF @ 10 V885 pF @ 10 V1169 pF @ 15 V
Power Dissipation (Max)
690mW (Ta)2W (Ta), 35W (Tc)2.9W (Ta), 15.6W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-50°C ~ 150°C (TJ)
Supplier Device Package
PowerPAK® SC-70-6SOT-883TO-252
Package / Case
PowerPAK® SC-70-6SC-101, SOT-883TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPak SC-70-6 Single
SIA459EDJ-T1-GE3
MOSFET P-CH 20V 9A PPAK SC70-6
Vishay Siliconix
16,998
In Stock
1 : ¥3.94000
Cut Tape (CT)
3,000 : ¥1.32090
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
9A (Tc)
2.5V, 4.5V
35mOhm @ 5A, 4.5V
1.2V @ 250µA
30 nC @ 10 V
±12V
885 pF @ 10 V
-
2.9W (Ta), 15.6W (Tc)
-50°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6
PowerPAK® SC-70-6
GSFW0202
GSFW02009
MOSFET, P-CH, SINGLE, -0.85A, -2
Good-Ark Semiconductor
18,208
In Stock
1 : ¥1.56000
Cut Tape (CT)
10,000 : ¥0.21990
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
850mA (Ta)
1.8V, 4.5V
640mOhm @ 550mA, 4.5V
1V @ 250µA
0.8 nC @ 4.5 V
±12V
58 pF @ 10 V
-
690mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-883
SC-101, SOT-883
TO-252-3, DPak (2 Leads + Tab), SC-63
PJD35P03_L2_00001
30V P-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
2,159
In Stock
1 : ¥6.98000
Cut Tape (CT)
3,000 : ¥1.56306
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
8.4A (Ta), 35A (Tc)
4.5V, 10V
19mOhm @ 8A, 10V
2.5V @ 250µA
11 nC @ 4.5 V
±20V
1169 pF @ 15 V
-
2W (Ta), 35W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.