Single FETs, MOSFETs

Results: 4
Series
HEXFET®OptiMOS™SIPMOS®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
80 V100 V120 V200 V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)15A (Tc)40A (Tc)70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
7.5mOhm @ 20A, 10V11.1mOhm @ 70A, 10V200mOhm @ 11.3A, 10V600mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id
2V @ 1.54mA3.8V @ 36µA4V @ 250µA4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V29.5 nC @ 10 V62 nC @ 10 V65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 25 V1490 pF @ 25 V2080 pF @ 40 V4355 pF @ 25 V
Power Dissipation (Max)
43W (Tc)69W (Tc)125W (Tc)128W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TO252-3PG-TSDSON-8-26TO-252AA (DPAK)
Package / Case
8-PowerTDFNTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-PowerTDFN
BSZ075N08NS5ATMA1
MOSFET N-CH 80V 40A 8TSDSON
Infineon Technologies
65,652
In Stock
1 : ¥8.87000
Cut Tape (CT)
5,000 : ¥5.26864
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
40A (Tc)
6V, 10V
7.5mOhm @ 20A, 10V
3.8V @ 36µA
29.5 nC @ 10 V
±20V
2080 pF @ 40 V
-
69W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSDSON-8-26
8-PowerTDFN
TO252-3
SPD15P10PLGBTMA1
MOSFET P-CH 100V 15A TO252-3
Infineon Technologies
7,504
In Stock
1 : ¥11.66000
Cut Tape (CT)
2,500 : ¥6.97012
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
15A (Tc)
4.5V, 10V
200mOhm @ 11.3A, 10V
2V @ 1.54mA
62 nC @ 10 V
±20V
1490 pF @ 25 V
-
128W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IPD70N12S311ATMA1
MOSFET N-CH 120V 70A TO252-31
Infineon Technologies
8,438
In Stock
1 : ¥16.58000
Cut Tape (CT)
2,500 : ¥7.49036
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
120 V
70A (Tc)
10V
11.1mOhm @ 70A, 10V
4V @ 83µA
65 nC @ 10 V
±20V
4355 pF @ 25 V
-
125W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IRFR220NTRLPBF
MOSFET N-CH 200V 5A DPAK
Infineon Technologies
15,646
In Stock
1 : ¥6.98000
Cut Tape (CT)
3,000 : ¥2.89527
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
200 V
5A (Tc)
10V
600mOhm @ 2.9A, 10V
4V @ 250µA
23 nC @ 10 V
±20V
300 pF @ 25 V
-
43W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
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of 4

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.