Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRFH9310TRPBF MOSFET P-CH 30V 21A/40A PQFN Infineon Technologies	5,199 In Stock	1 : ¥11.58000 Cut Tape (CT) 4,000 : ¥4.78075 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	21A (Ta), 40A (Tc)	4.5V, 10V	4.6mOhm @ 21A, 10V	2.4V @ 100µA	58 nC @ 4.5 V	±20V	5250 pF @ 15 V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6)	8-PowerVDFN
SI2315BDS-T1-GE3 MOSFET P-CH 12V 3A SOT23-3 Vishay Siliconix	14,783 In Stock	1 : ¥5.25000 Cut Tape (CT) 3,000 : ¥1.74452 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	12 V	3A (Ta)	4.5V	50mOhm @ 3.85A, 4.5V	900mV @ 250µA	15 nC @ 4.5 V	±8V	715 pF @ 6 V	-	750mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
GSFQ1008 MOSFET, N-CH, SINGLE, 8A, 100V, Good-Ark Semiconductor	5,239 In Stock	1 : ¥4.68000 Cut Tape (CT) 3,000 : ¥1.80341 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	8A (Ta)	4.5V, 10V	15mOhm @ 5A, 10V	2.5V @ 250µA	22 nC @ 10 V	±20V	1300 pF @ 50 V	-	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.