Single FETs, MOSFETs

Results: 2
Series
U-MOSVIU-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
170mA (Ta)10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
20mOhm @ 4A, 10V3.9Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.35 nC @ 4.5 V20.4 nC @ 4.5 V
Vgs (Max)
+20V, -25V±20V
Input Capacitance (Ciss) (Max) @ Vds
17 pF @ 10 V1150 pF @ 15 V
Power Dissipation (Max)
150mW (Ta)1.25W (Ta)
Supplier Device Package
6-UDFNB (2x2)USM
Package / Case
6-WDFN Exposed PadSC-70, SOT-323
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
51,015
In Stock
1 : ¥1.23000
Cut Tape (CT)
3,000 : ¥0.24805
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
170mA (Ta)
4.5V, 10V
3.9Ohm @ 100mA, 10V
2.1V @ 250µA
0.35 nC @ 4.5 V
±20V
17 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
USM
SC-70, SOT-323
39,005
In Stock
1 : ¥5.75000
Cut Tape (CT)
3,000 : ¥1.33130
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
10A (Ta)
4V, 10V
20mOhm @ 4A, 10V
2.2V @ 250µA
20.4 nC @ 4.5 V
+20V, -25V
1150 pF @ 15 V
-
1.25W (Ta)
150°C (TJ)
Surface Mount
6-UDFNB (2x2)
6-WDFN Exposed Pad
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.