Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRF640NPBF MOSFET N-CH 200V 18A TO220AB Infineon Technologies	52,073 In Stock	1 : ¥6.81000 Tube	HEXFET®	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	150mOhm @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	1160 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPP06CN10LG N-CHANNEL POWER MOSFET Infineon Technologies	490 Marketplace	Unavailable Unavailable in your selected currency	OptiMOS™ 2	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	100 V	100A (Tc)	4.5V, 10V	6.2mOhm @ 100A, 10V	2.4V @ 180µA	124 nC @ 10 V	±20V	11900 pF @ 50 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.