Single FETs, MOSFETs

Results: 6
Manufacturer
Diodes IncorporatedNexperia USA Inc.onsemi
Series
-TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
25 V50 V60 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)220mA (Ta)310mA (Ta)320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V4.5V, 10V5V10V
Rds On (Max) @ Id, Vgs
1.6Ohm @ 300mA, 10V1.6Ohm @ 500mA, 10V3.5Ohm @ 200mA, 5V3.5Ohm @ 220mA, 10V4Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id
1.06V @ 250µA1.5V @ 1mA1.5V @ 250µA2.3V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V0.8 nC @ 4.5 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
9.5 pF @ 10 V24.5 pF @ 20 V50 pF @ 10 V50 pF @ 25 V
Power Dissipation (Max)
200mW (Ta)225mW (Ta)260mW (Ta), 830mW (Tc)280mW (Tj)300mW (Ta)350mW (Ta)
Operating Temperature
-55°C ~ 150°C (TA)-55°C ~ 150°C (TJ)
Supplier Device Package
SC-70-3 (SOT323)SOT-23-3SOT-23-3 (TO-236)SOT-323
Package / Case
SC-70, SOT-323TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
2N7002KT1G
MOSFET N-CH 60V 320MA SOT23-3
onsemi
245,478
In Stock
1 : ¥1.81000
Cut Tape (CT)
3,000 : ¥0.29870
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
320mA (Ta)
4.5V, 10V
1.6Ohm @ 500mA, 10V
2.3V @ 250µA
0.7 nC @ 4.5 V
±20V
24.5 pF @ 20 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-323
BSS138PW,115
MOSFET N-CH 60V 320MA SOT323
Nexperia USA Inc.
913,706
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37872
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
320mA (Ta)
10V
1.6Ohm @ 300mA, 10V
1.5V @ 250µA
0.8 nC @ 4.5 V
±20V
50 pF @ 10 V
-
260mW (Ta), 830mW (Tc)
-55°C ~ 150°C (TA)
Automotive
AEC-Q101
Surface Mount
SOT-323
SC-70, SOT-323
SOT-323
BSS138W-7-F
MOSFET N-CH 50V 200MA SOT323
Diodes Incorporated
745,947
In Stock
1 : ¥2.38000
Cut Tape (CT)
3,000 : ¥0.40362
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
10V
3.5Ohm @ 220mA, 10V
1.5V @ 250µA
-
±20V
50 pF @ 10 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-323
SC-70, SOT-323
SOT-23-3
FDV301N
MOSFET N-CH 25V 220MA SOT23
onsemi
305,672
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.45080
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
220mA (Ta)
2.7V, 4.5V
4Ohm @ 400mA, 4.5V
1.06V @ 250µA
0.7 nC @ 4.5 V
±8V
9.5 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT 23-3
BSS138LT1G
MOSFET N-CH 50V 200MA SOT23-3
onsemi
371,715
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.52959
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
5V
3.5Ohm @ 200mA, 5V
1.5V @ 1mA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SC-70-3
2N7002WT1G
MOSFET N-CH 60V 310MA SC70-3
onsemi
20,091
In Stock
1 : ¥1.72000
Cut Tape (CT)
3,000 : ¥0.28770
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
310mA (Ta)
4.5V, 10V
1.6Ohm @ 500mA, 10V
2.5V @ 250µA
0.7 nC @ 4.5 V
±20V
24.5 pF @ 20 V
-
280mW (Tj)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SC-70-3 (SOT323)
SC-70, SOT-323
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.