Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesSTMicroelectronicsVishay Siliconix
Series
HEXFET®OptiMOS™STripFET™ IITrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
40 V60 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)24A (Tc)50A (Tc)120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V10V
Rds On (Max) @ Id, Vgs
1.8mOhm @ 100A, 10V6.8mOhm @ 50A, 10V8mOhm @ 10A, 10V40mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2.5V @ 100µA2.5V @ 250µA4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V49 nC @ 4.5 V51 nC @ 10 V134 nC @ 10 V
Vgs (Max)
±16V±18V±20V
Input Capacitance (Ciss) (Max) @ Vds
660 pF @ 25 V2406 pF @ 20 V3779 pF @ 50 V10740 pF @ 25 V
Power Dissipation (Max)
6W (Tc)60W (Tc)143W (Tc)158W (Tc)
Supplier Device Package
8-SOICDPAKPG-TO263-3TO-252AA (DPAK)
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
MFG_DPAK(TO252-3)
STD20NF06LT4
MOSFET N-CH 60V 24A DPAK
STMicroelectronics
11,285
In Stock
1 : ¥11.99000
Cut Tape (CT)
2,500 : ¥4.95748
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
24A (Tc)
5V, 10V
40mOhm @ 12A, 10V
2.5V @ 250µA
13 nC @ 10 V
±18V
660 pF @ 25 V
-
60W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IRLR3636TRPBF
MOSFET N-CH 60V 50A DPAK
Infineon Technologies
15,455
In Stock
1 : ¥15.52000
Cut Tape (CT)
2,000 : ¥6.98088
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
50A (Tc)
4.5V, 10V
6.8mOhm @ 50A, 10V
2.5V @ 100µA
49 nC @ 4.5 V
±16V
3779 pF @ 50 V
-
143W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
8-SOIC
SQ4050EY-T1_GE3
MOSFET N-CHANNEL 40V 19A 8SOIC
Vishay Siliconix
4,192
In Stock
1 : ¥8.29000
Cut Tape (CT)
2,500 : ¥3.43630
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
19A (Tc)
4.5V, 10V
8mOhm @ 10A, 10V
2.5V @ 250µA
51 nC @ 10 V
±20V
2406 pF @ 20 V
-
6W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB120N04S402ATMA1
MOSFET N-CH 40V 120A D2PAK
Infineon Technologies
2,734
In Stock
1 : ¥24.96000
Cut Tape (CT)
1,000 : ¥12.88217
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
120A (Tc)
10V
1.8mOhm @ 100A, 10V
4V @ 110µA
134 nC @ 10 V
±20V
10740 pF @ 25 V
-
158W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.