Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
Current - Continuous Drain (Id) @ 25°C
7.7A (Ta), 37A (Tc)16A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs
5.4mOhm @ 50A, 10V16.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.3V @ 18µA2.3V @ 61µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 50 V3400 pF @ 50 V
Power Dissipation (Max)
2.1W (Ta), 43W (Tc)2.5W (Ta), 96W (Tc)
Supplier Device Package
PG-TDSON-8-7PG-TSDSON-8-26
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
ISC0806NLSATMA1
MOSFET N-CH 100V 16A/97A TDSON
Infineon Technologies
4,860
In Stock
1 : ¥19.38000
Cut Tape (CT)
5,000 : ¥8.40175
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
16A (Ta), 97A (Tc)
4.5V, 10V
5.4mOhm @ 50A, 10V
2.3V @ 61µA
49 nC @ 10 V
±20V
3400 pF @ 50 V
-
2.5W (Ta), 96W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
BSXXXXXXMA1
ISZ0803NLSATMA1
MOSFET N-CH 100V 7.7A/37A TSDSON
Infineon Technologies
5,000
In Stock
1 : ¥9.44000
Cut Tape (CT)
5,000 : ¥3.72214
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
100 V
7.7A (Ta), 37A (Tc)
4.5V, 10V
16.9mOhm @ 20A, 10V
2.3V @ 18µA
15 nC @ 10 V
±20V
1000 pF @ 50 V
-
2.1W (Ta), 43W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-26
8-PowerTDFN
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.