Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

DMN3200U-7 MOSFET N-CH 30V 2.2A SOT23-3 Diodes Incorporated	67,270 In Stock 582,000 Factory	1 : ¥3.69000 Cut Tape (CT) 3,000 : ¥0.99221 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	2.2A (Ta)	1.5V, 4.5V	90mOhm @ 2.2A, 4.5V	1V @ 250µA	-	±8V	290 pF @ 10 V	-	650mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMP3098LQ-7 MOSFET P-CH 30V 3.8A SOT23-3 Diodes Incorporated	209,121 In Stock	1 : ¥2.96000 Cut Tape (CT) 3,000 : ¥0.79326 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	3.8A (Ta)	4.5V, 10V	70mOhm @ 3.8A, 10V	2.1V @ 250µA	8 nC @ 4.5 V	±20V	1008 pF @ 25 V	-	1.08W (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IRFU9024NPBF MOSFET P-CH 55V 11A IPAK Infineon Technologies	6,049 In Stock	1 : ¥7.14000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	55 V	11A (Tc)	10V	175mOhm @ 6.6A, 10V	4V @ 250µA	19 nC @ 10 V	±20V	350 pF @ 25 V	-	38W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	IPAK (TO-251AA)	TO-251-3 Short Leads, IPAK, TO-251AA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.