Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

FDS6681Z MOSFET P-CH 30V 20A 8SOIC onsemi	19,376 In Stock	1 : ¥17.24000 Cut Tape (CT) 2,500 : ¥7.79035 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	20A (Ta)	4.5V, 10V	4.6mOhm @ 20A, 10V	3V @ 250µA	260 nC @ 10 V	±25V	7540 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
DMN60H080DS-7 MOSFET N-CH 600V 80MA SOT23-3 Diodes Incorporated	54,061 In Stock 273,000 Factory	1 : ¥3.04000 Cut Tape (CT) 3,000 : ¥0.66535 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	80mA (Ta)	4.5V, 10V	100Ohm @ 60mA, 10V	3V @ 250µA	1.7 nC @ 10 V	±20V	25 pF @ 25 V	-	1.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMP45H150DHE-13 MOSFET P-CH 450V 250MA SOT223 Diodes Incorporated	11,051 In Stock 107,500 Factory	1 : ¥3.86000 Cut Tape (CT) 2,500 : ¥1.31015 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	450 V	250mA (Tc)	10V	150Ohm @ 50mA, 10V	4V @ 250µA	1.8 nC @ 10 V	±30V	59.2 pF @ 25 V	-	13.9W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-3	TO-261-4, TO-261AA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.