Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
OptiMOS™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
2.2A (Ta)52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V
Rds On (Max) @ Id, Vgs
22mOhm @ 52A, 10V174mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
4V @ 137µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V135 nC @ 10 V
Power Dissipation (Max)
1.9W (Ta)214W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TSON-8-3PowerPAK® SO-8
Package / Case
8-PowerTDFNPowerPAK® SO-8
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK SO-8
SI7431DP-T1-GE3
MOSFET P-CH 200V 2.2A PPAK SO-8
Vishay Siliconix
6,183
In Stock
1 : ¥32.26000
Cut Tape (CT)
3,000 : ¥15.72394
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
200 V
2.2A (Ta)
6V, 10V
174mOhm @ 3.8A, 10V
4V @ 250µA
135 nC @ 10 V
±20V
-
-
1.9W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
PG-TSON-8-3
BSC220N20NSFDATMA1
MOSFET N-CH 200V 52A TSON-8
Infineon Technologies
10,819
In Stock
1 : ¥38.01000
Cut Tape (CT)
5,000 : ¥17.77012
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
52A (Tc)
10V
22mOhm @ 52A, 10V
4V @ 137µA
43 nC @ 10 V
±20V
3680 pF @ 100 V
-
214W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TSON-8-3
8-PowerTDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.