Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRFP260MPBF MOSFET N-CH 200V 50A TO247AC Infineon Technologies	6,346 In Stock	1 : ¥22.17000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	50A (Tc)	10V	40mOhm @ 28A, 10V	4V @ 250µA	234 nC @ 10 V	±20V	4057 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRFD120PBF MOSFET N-CH 100V 1.3A 4DIP Vishay Siliconix	0 In Stock	1 : ¥10.92000 Bulk	-	Bulk	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	100 V	1.3A (Ta)	10V	270mOhm @ 780mA, 10V	4V @ 250µA	16 nC @ 10 V	±20V	360 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 175°C (TJ)	Through Hole	4-HVMDIP	4-DIP (0.300", 7.62mm)

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.